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Discrete Devices
2008-6
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S SANY ANYO O Discr Discre ete De te Dev vices ices SANYO's environmentally-considered discrete "ECoP" contributes to the realization of comfortable life in Contents various aspects. ■ Devices for Mobile Equipment p2 ■ Devices for SW Power Supply p14 ■ Devices for Lighting p28 ■ Devices for Modem p31 ■ Devices for Infrared Sensor p31 ■ Devices for Satellite/GPS p32 ■ FM Transmitter p33 Invisible Friendly Smart Ultra-small High-efficient Multi-function Thin-form Energy-saving High-performance L
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Devices for Mobile Equipment ■ Application Block ■ Charger [GSM] Charger DC-DC Converter / Load SW P3 CPU P6 Down Converter (Low end) AC Adapter AC adapter Q1 Q2 System Input Q1 D1 5V to 6V/0.5A to 1A Control IC Down Converter (High end) IrDA Power management IC Li-ion battery Li-ion Battery MIC P11 Battery P5 MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch)) ❈: Development M P12 Up Converter (Low end) Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C V [V] V / I / R (
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Devices for Mobile Equipment ■ Li-ion Battery [CDMA] P+ TR1 B+ USB bus power CELL Control IC SBD1 AC adapter B- External connection TR2 terminal Main unit circuit (load) Charging terminal Input MOSFET1 Power SBD2 5V to 6V/0.6A to 1A management IC P- Li-ion battery Battery Protection Recommended Bipolar Transistors (PNP) Recommended MOSFETs (Nch) ❈: Development V I V CEO C DSS MCPH3 MCPH6 CPH3 CPH6 VEC8 VEC8(2 in 1) EMH8 ECH8 TSSOP8 SOP8 [V] [A] [V] 2.5 MCH3143 CPH3143 ❈ VEC1105 EMH2405 ECH8601R
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Devices for Mobile Equipment ■ DC-DC Converter/Load SW [Bipolar Transistor Use Example] (1) DC-DC Converter Recommended MOSFETs R (on) DS Step up chopper Step down chopper Back Converter V max [mΩ] Drive DSS V V V V IN OUT IN OUT Package Type No. SBD (Step Down) [V] V =4V [V] GS (*: V =4.5V) GS SCH2809 290* 1.8 -12 SCH6 SCH2810 530 2.5 15V/0.5A SCH2811 -30 830 4.0 MCH5815 290* 1.8 -12 15V/0.5A MCH5818 530 MCPH5 MCH5802 -30 1090 4.0 30V/0.5A Bipolar Transistors + Schottky Barrier Diodes MCH5805 -
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Devices for Mobile Equipment ■ LCD-Backlight [Power MOSFET Use Example] (2) Load SW Recommended MOSFETs Push-Pull Half-Bridge Full-Bridge V MCPH6 CPH6 VEC8 EMH8 Application Sample: Pch + Nch DSS 20V MCH6628 CPH6605 - EMH2603 N1 P1 P1 P2 N2 N1 N1 N2 30V MCH6614 CPH6615 VEC2612 EMH2602 Power MOSFETs (Pch + Nch) ●: New products Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C Power MOSFETs R (on) [Ω] DS Electrical Type No. Package Polarity V V I P Ciss Qg V R (on) max [mΩ] V Set
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Devices for Mobile Equipment ■ Flash Unit ■ Condenser Microphone [Use Example] [High-Frequency Devices Use Example] FRD Battery 300V Trans The electric capacity changes Mobile phone Sound Hands-free Xe-tube Digital camera diaphragm Digital video camera Back plate Portable games Trigger IGBT other C G M transformer IGBT DRIVER V CC SD Control IC S/W element V Impedance transformation OUT Electric signal output High-Frequency Devices for Condenser Microphone Absolute maximum ratings/Ta=25˚C Electr
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Devices for Mobile Equipment ■ Devices for Motor [MOSFETs Use Example] Devices for Fan Motor [Bipolar Transistor Use Example] Single-phase Motor (H-Bridge, Half pre.): #5 Single-phase Motor (H-Bridge): #6 Three-phase Motor: #7 • For the purpose of power consumption reduction, Q1 Q3 Q5 low saturated voltage transistor is recommended. LB11660V V CC Motor Driver • PCP and TP packages with good radiation are Q1 Q3 recommended. V IN • Composite type (B-E bias resistor, and C-E diode M M are embedded)
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Devices for SW Power Supply ■ Switching Power Supply Types & Recommended Power MOSFETs Map ■ Switching Devices [MOSFET/FRD/SBD Use Example] Universal AC Input 20 Forward (1 or 2 used) ACIN V : 600 to 800V DSS FRD Full-bridge (4 used) V : 450 to 500V DSS 14 PFC Control SBD PFC DC MOSFET Flyback Output RCC or PWM 8 V : 600 to 800V DSS Half-bridge (2 used) When output becomes large, a high V DSS V : 450 to 500V SBD DSS is required for the device Main SW ex) Flyback Circuit 6 MOSFET Output 80W → V ≥
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Devices for SW Power Supply ■ LCD TV (3) Bipolar Transistors for Adapter Recommended Devices by LCD-TV Panel Size (1) When BL inverter is half-bridge circuit, and AV output is fl yback circuit [Bipolar Transistor Use Example] Output +5.6 to 5.8V/600 to 700mA Main PFC Circuit Half-Bridge Power Supply AC Input Starting ACIN S/W Tr resistor V CC PFC FRD(1) Pulse IN - R BE SBD(2)/FRD(2) Main SW MOSFET(2) PFC DC Control Output Thermistor PFC MOSFET(1) Main SW MOSFET(2) SBD(2)/FRD(2) Control IC Flyback
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Devices for SW Power Supply (2) The example when BL inverter adoptes PFC voltage direct input circuit, and AV output adopts fl yback circuit (3) Devices for BL Inverter 1) Recommended Devices for Bridge Circuit Push-Pull Type PFC Circuit ACIN [Feature] PFC FRD(1) • Compared with half-bridge type, although doubled voltage is needed, meanwhile RDS(on) can be suppressed due to the use of Nch, PFC Direct input BL Inverter so a good symmetry can be achieved. Main SW Because the current capacity is l
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Devices for SW Power Supply Full-bridge Type, Half-bridge Type Self-excitation Type (collector resonance) [Feature: Full-bridge/Half-bridge Type] [Feature] • Pch/Nch drive • Multi tubes can be driven by using a power device with large current capacity. • A large current device can drive multi tubes, thus the needed parts count can be reduced. also, the number of inverter circuits and used parts can be reduced. → • 4 to 8 tubes can be driven by circuit. [Feature: Half-bridge Type (High voltage i
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Devices for SW Power Supply (4) Devices for Power MOSFET Buffer 2) High Voltage Driver ExPD 1) Low Side Driver ExPD [MOSFET, IGBT Gate driver IC] [ExPD Use Example] [Application] • PDP, LCD-backlight, inverter light, liquid crystal projector, HID drive, motor drive, half-bridge/full-bridge power supply, etc. • High withstand voltage driver (600V) • Under-voltage protection function is built in [ExPD Use Example] HIN HOUT MOSFET 1 • Withstand voltage of 25V is assured. L TND506MD • 2 low side dri
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Devices for SW Power Supply 3) LCD-Backlight Inverter: ExPD 5) Air conditioner fan motor drive: ExPD [TND3xx Use Example: MOSFET Driver] [TND512MD Use Example] Half-Bridge MOSFET Full-Bridge MOSFET Push-Pull MOSFET VM C16 C17 C1 C2 104 104 1000μF 104 T1 T4 T5 TND3xx C18 GND 104 V DD N1 P1 P2 V UOUT VOUT WOUT V DD DD P1 CCFL T2 T4 T6 N1 N2 GND TND3xx TND3xx V DD N1 N2 C23 C24 C25 CCFL 472 472 472 TND3xx GND GND CCFL V CC GND R8 R7 R9 R10 R11 R12 R4 C3 10μF C10 1.1kΩ C11 105 C12 105 105 [TND3xx Us
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Devices for SW Power Supply DC-DC Converter IC ■ 6) Bipolar Transistors: Separately-excited Inverter (MOSFET for Gate Drive) TN8D41A/51A, TN5D41A/51A/61A: Separately-excited step-down switching regulator [Functions/Features] [Bipolar Transistor Use Example] • Large current I max 8A (TN8D41A/51A) • Built-in reference oscillator (150kHz) O I max 5A (TN5D41A/51A/61A) • Built-in current limiter O • IC with large IC is recommended for driving large-capacitance MOSFET • High effi ciency Vertical-type
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16.1 Devices for Lighting ■ Inverter light [Bipolar Transistor Use Example: Ball Lamp] [MOSFET Use Example] D2 H L1 DB1 D3 RD1006LS(600V/10A) L1 OUT1 D4 for Inverter circuit use Inductor (2 devices are used) DB Q2 C2 OUT2 N R2 Q3 Q1 C5 V1 for PFC circuit + + AC NPN OUT3 TND506 L2 C3 C2 C1 C4 to C Light TND509 OUT4 Q4 + C1 R Light Q2 NPN Control IC R R Recommended Devices and Spec: Surface Mount Type Recommended devices by inverter lighting set [AC=200V input] Bipolar Transistors Set output 8.2 A
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Devices for Lighting Devices for Modem and Infrared Sensor ■ Emergency Lamp ■ Devices for Modem [2SK4043LS Use Example] [High-Voltage Transistor Use Example for MODEM Circuit] High-voltage TR TIP T1 Lamp Safety FUSE Modular Jack & Protection Modem RING AC Controller High-voltage TR High-voltage Q1 + TR Control IC C1 FUSE Q2 RS Battery D9 + Transistors for Modem Circuit ●: New products Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C MOSFETs ●: New products h V (sat) [V] FE f C
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Devices for Satellite/GPS FM Transmitter ■ Satellite LNB ■ FM Transmitter [Satellite LNB] [Varactor Diode Use Example] V =+14.4V (From cigarette Lighter in a car) CC Frequency: 9 to 14GHz RF IN V_Reg LNA. MIX IF Amp. CONT. 3.3V 3LN02M✕5 IF OUT V DD AS Lo CLK RF OUT DATA LV2282VA LO ATT PON VCO Ultrahigh-Frequency Transistors f_Ref Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C 2 NF |S21e| f T Type No. Package V I P Block CEO C C typ f typ f V I typ CE C [V] [mA] [mW] [GHz]
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Ordering number : EP124 SANYO Semiconductor Co.,Ltd. Website http://www.semic.sanyo.co.jp/index_e.htm SANYO Semiconductor Co., Ltd. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice.
