Instruction d'utilisation Panasonic Transistors 2SB1462J

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1462J
Silicon PNP epitaxial planar type
+0.05 Unit: mm
1.60
–0.03
+0.03
0.12
–0.01
1.00±0.05
For general amplification
3
Complementary to 2SD2216J
12
■ Features
0.27±0.02
• High forward current transfer ratio h
FE
(0.50)(0.50)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
5˚
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
Collector-base

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1462J P  T I  I I  V C a C B B BE 150 −120 −1 200 V = −10 V V = −10 V CE CE T = 25°C T = 25°C a a 125 −100 −1 000 100 −80 −800 75 −60 −600 50 −400 −40 25 −200 −20 0 0 0 0 20 40 60 80 100 120 140 160 0 −60 −120 −180 −240 −300 −360 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Ambient temperature T (°C) Base current I (µA) Base-emitter voltage V (V) a B BE I  V V  I h  I C BE CE(sat) C FE C −120 −10 360 I / I = 10 C B V = −10 V V

Résumé du contenu de la page N° 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application