Philips BGD885 user manual

Summary of the content on the page No. 1

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D248
BGD885
860 MHz, 17 dB gain power
doubler amplifier
Product specification 2001 Nov 02
Supersedes data of 2001 Oct 25

Summary of the content on the page No. 2

Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 FEATURES PINNING - SOT115D • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2, 3, 5, 6, 7 common • Rugged construction 4 10 V, 200 mA supply terminal • Gold metallization ensures excellent reliability. 8+V B 9 output DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 to 860 MHz at a handbook, halfpage 24 6 8 v

Summary of the content on the page No. 3

Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; V = 24 V; T =35 °C; Z =Z =75 Ω B mb S L SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT G power gain f = 50 MHz 16.5 17.5 dB p SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB FL flatness of frequency response f = 40 to 860 MHz -± 0.5 dB S input return losses f = 40 MHz; note 1 20 - dB 11 f = 800 to 860 MHz 10 - dB S output return losses f = 40 MHz; note

Summary of the content on the page No. 4

Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 BGD885 1 23 45 67 89 input output 10 V C1 V = 24 V B C2 MEA094-2 Fig.2 Test circuit. List of components (see Fig.2) COMPONENT DESCRIPTION VALUE C1 ceramic multilayer capacitor 1 nF (max.) C2 ceramic multilayer capacitor 1 nF R resistor 56 Ω, 2W 2001 Nov 02 4

Summary of the content on the page No. 5

Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads SOT115D D E Z A 2 1 23 4 56 78 9 A L F S W e b M w c q y M 2 B d e 1 U Q 2 q y M B 1 B y M B P U q 1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A U A D d E L Q Z 2 1 UNIT ee∅ P q W w y bF c q q S U 1 1 2 2 max. max

Summary of the content on the page No. 6

Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS (2) STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be

Summary of the content on the page No. 7

Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 NOTES 2001 Nov 02 7

Summary of the content on the page No. 8

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of