Panasonic Schottky Barrier Diodes MA3S795EG user manual

Summary of the content on the page No. 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3S795EG
Silicon epitaxial planar type
For switching
For wave detection
 Package
 Features  Code
 High-density mounting is possible
SSMini3-F3
 Forward voltage V , optimum for low voltage recti fication:V < 0.3 V
 Pin Name
F F
 Optimum for high frequency recti fication because of its short
1: Anode 1
reverse recovery time t
rr
2: Anode 2
3: Cathode
 Absolute Maximum Ratings T = 25°C

Summary of the content on the page No. 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3S795EG I  V I  V V  T F F R R F a 3 4 10 10 1.0 T = 125°C a 75°C 25°C 2 3 10 10 0.8 T = 125°C −20°C a I = 30 mA 75°C F 2 10 10 0.6 10 mA 25°C 1 10 0.4 –1 10 1 0.2 1 mA –2 −1 10 10 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 5 10 15 20 25 30 −40 0 40 80 120 160 200 Forward voltage V (V) Reverse voltage V (V) ( ) Ambient temperature T °C F R a I  T C  V R a t R 4 10 3.0 f = 1 MHz T = 25°C a V = 25 V R 2.5 3 10 3 V 1 V 2.0 2 10 1.5

Summary of the content on the page No. 3

This product complies with the RoHS Directive (EU 2002/95/EC). MA3S795EG SSMini3-F3 Unit: mm +0.05 1.60 −0.03 +0.05 0.26 −0.02 3 1 2 +0.05 (0.50) (0.50) 0.13 −0.02 1.00 ±0.05 (5°) SKH00236AED 3 +0.05 0 to 0.10 0.85 −0.03 +0.05 0.70 −0.03 1.60 ±0.05 (5°) 0.375 ±0.05 (0.45)

Summary of the content on the page No. 4

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application