Краткое содержание страницы № 1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BGA6589
MMIC wideband medium power
amplifier
Product specification 2003 Sep 19
Краткое содержание страницы № 2
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 FEATURES PINNING • Broadband 50 Ω gain block PIN DESCRIPTION • 20 dBm output power 1 RF out/bias • SOT89 package 2 GND 3RFin • Single supply voltage needed. APPLICATIONS • Broadband medium power gain blocks handbook, halfpage • Small signal high linearity amplifiers 3 1 • Variable gain and high output power in combination with the BGA2031 2 • Cellular, PCS and CDPD 1 23 • IF/RF buffer amplifier MGX418 Bottom
Краткое содержание страницы № 3
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DC device voltage RF input AC coupled - 6V S I DC supply current - 150 mA S P total power dissipation T ≤ 70 °C; note 1 - 800 mW tot s T storage temperature - 65 +150 °C stg T operating junction temperature - 150 °C j P maximum drive power - 15 dBm D Note 1. T is the temperature at th
Краткое содержание страницы № 4
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 CHARACTERISTICS V =9V; I = 84 mA; T =25 °C; IP3 tone spacing = 1 MHz; P = 0 dBm per tone (see Fig.2); R =51 Ω; S S amb (out) L bias Z =Z = 50 Ω; unless otherwise specified. L S SYMBOL PARAMETER CONDITIONS TYP. UNIT 2 |s | insertion power gain f = 850 MHz 22 dB 21 f = 1.95 GHz 17 dB f = 2.5 GHz 15 dB R return losses input f = 850 MHz 9 dB LIN f = 1.95 GHz 11 dB f = 2.5 GHz 15 dB R return losses output f = 850 M
Краткое содержание страницы № 5
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA6589 MMIC. The device is internally matched to 50 Ω, and therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2 depends on the operating frequency; see the tables below. Capacitors C1 and C2 are used in conjunction with L1 and C3 to fine tune the input and output impeda
Краткое содержание страницы № 6
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 90 handbook, full pagewidth 1.0 +1 0.8 135 45 +0.5 +2 0.6 0.4 +0.2 +5 0.2 0 0.2 0.5 1 2 5 10 180 0 0 200 MHz 2.6 GHz - 0.2 - 5 - 2 - 0.5 - 135 - 45 - 1 1.0 - 90 MGX409 I = 84 mA; V = 9 V; P = - 30 dBm; Z =50 Ω. S S D O Fig.3 Input reflection coefficient (s ); typical values. 11 90 handbook, full pagewidth 1.0 +1 0.8 135 45 +0.5 +2 0.6 0.4 +0.2 +5 2.6 GHz 0.2 0 0.2 0.5 1 2 5 10 180 0 0 200 MHz -
Краткое содержание страницы № 7
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 MGX411 MGX412 0 25 handbook, halfpage handbook, halfpage 2 2 |s | |s | 21 12 (dB) (dB) 20 - 10 15 - 20 10 - 30 5 - 40 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 f (MHz) f (MHz) I = 84 mA; V = 9 V; P = - 30 dBm; Z =50 Ω. I = 84 mA; V = 9 V; P = - 30 dBm; Z =50 Ω. S S D O S S D O 2 2 Fig.5 Isolation (|s | ) as a function of frequency; Fig.6 Insertion gain (|s | ) as a function of 12 21 typical values
Краткое содержание страницы № 8
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 MGX415 MGX416 5 5 handbook, halfpage handbook, halfpage NF K (dB) 4 4 3 3 2 2 1 1 0 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 f (MHz) f (MHz) I = 84 mA; V = 9 V; Z =50 Ω. I = 84 mA; V = 9 V; Z =50 Ω. S S O S S O Fig.9 Noise figure as a function of frequency; Fig.10 Stability factor as a function of frequency; typical values. typical values. MGX417 100 handbook, halfpage I s (mA) 90 80 70 60 - 40 -
Краткое содержание страницы № 9
Philips Semiconductors Philips Semiconductors Product specification Product specification MMIC wideband medium po MMIC wideband medium pow wer amplifier er amplifier BGA6589 BGA6589 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2003 2003 Sep Sep 19 19 9 9 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated corre
Краткое содержание страницы № 10
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A b 3 E H E L 12 3 b c 2 w M b 1 e 1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) L UNIT A b b b c D E e e H w 1 2 3 1 E min. 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 mm 3.0 1.5 0.8 0.13 1.4 0.35 0.40 1.4 0.37 4.4 2.4 3.75 REFERENCES EUROPEAN OUTLINE ISSUE DATE PROJECTION VERSION IEC JEDEC EIA
Краткое содержание страницы № 11
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION (1) (2)(3) STATUS STATUS I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data w
Краткое содержание страницы № 12
Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of
