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2N4123
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2N4123
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 30 V
CEO
VCBO Collector-Base Voltage 40 V
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 200 mA
C
Operating and Storage Junction Temperature Range -55 to +1
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2N4123 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 30 V (BR)CEO C B μ V Collector-Base Breakdown Voltage I = 10 A, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage μ 5.0 V (BR)EBO I = 10 A, I = 0 E C I Collector Cutoff Current V = 20 V, I = 0 50 nA CBO CB E I Emitter Cutoff Current V = 3.0 V, I = 0 50 nA
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2N4123 NPN General Purpose Amplifier (continued) Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 500 V = 5V CE 0.15 β = 10 400 125 °C 125 °C 300 0.1 25 °C 200 25 °C 0.05 - 40 °C 100 - 40 °C 0 0.1 1 10 100 0.1 1 10 100 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 β = 10 V = 5V 1 CE 0
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2N4123 θ - DEGREES NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 12 12 I = 1.0 mA C V = 5.0V I = 1.0 mA CE C R = 200Ω S 10 10 I = 50 µ A I = 5.0 mA C C Ω 8 R = 1.0 k S 8 I = 50 µ A C I = 0.5 mA C 6 R = 200Ω 6 S I = 100 A µ 4 4 C 2 2 I = 100 µ A, R = 500 Ω C S 0 0 0.1 1 10 100 0.1 1 10 100 f - FREQUENCY (kHz) R - SOURCE RESISTANCE ( k Ω ) S Power D
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2N4123 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current Fall Time vs Collector Current 500 500 I I c c I = I = I = I = B1 B2 B1 B2 10 10 T = 25°C J T = 125°C V = 40V J CC 100 100 T = 125°C J T = 25°C J 10 10 5 5 1 10 100 1 10 100 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C Current Gain Output Admittance 500 100 V = 10 V V = 10 V CE CE f = 1.0 kHz f = 1.0 kHz o o µ T
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2N4123 NPN General Purpose Amplifier (continued) Test Circuits 3.0 V 275 Ω ΩΩ 300 ns Ω Ω 10.6 V Duty Cycle = = = = = 2% 10 K ΩΩ ΩΩΩ 0 C < < < < < 4.0 pF - 0.5 V 1 < < < < < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V t 10 < < < < < t < < < < < 500 µµ µµµ s 1 1 10.9 V 275 ΩΩ ΩΩΩ Duty Cycle = = = = = 2% 10 K ΩΩ ΩΩΩ 0 C < < < < < 4.0 pF 1 1N916 - 9.1 V < < < < < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. PowerTrench SyncFET™ ACEx™ FASTr™ QFET™ TinyLogic™ Bottomless™ GlobalOptoisolator™ QS™ UHC™ CoolFET™ GTO™ QT Optoelectronics™ VCX™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ Quiet Series™ 2 TM E CMOS MICROWIRE™ SILENT SWITCHER TM EnSigna OPTOLOGIC™ SMART START™ FACT™ OPTOPLANAR™ SuperSOT™-3 PACMAN™ SuperSOT™-6 FA
