Manual de instrucciones de Panasonic 2SD1938(F)

Resumen del contenido incluido en la página 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
Unit: mm
+0.10
0.40
–0.05 +0.10
For muting
0.16
–0.06
3
For DC-DC converter
■ Features
• Low ON resistance R 2
1
on
• High forward current transfer ratio h
FE (0.95) (0.95)
• Mini type package, allowing downsizing of the equipment and
1.9±0.1
+0.20
2.90
automatic insertion through the tape packing –0.05
10˚
■ Absolute Maximum Ratings T = 25

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1938(F) P  T I  V I  V C a C CE C BE 250 18 100 T = 25°C V = 2 V a CE 90 16 IB = 10 µA 200 80 14 70 12 T = 85°C a −25°C 8 µA 150 60 10 50 8 25°C 6 µA 100 40 6 30 4 µA 4 50 20 2 2 µA 10 0 0 0 0 80 02 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 100 120 140 160 Collector-emitter voltage V (V) Base-emitter voltage V (V) ( ) Ambient temperature T °C CE BE a V  I h  I C  V CE(sat) C FE C ob CB 1 600 100 0.1 f = 1 M

Resumen del contenido incluido en la página 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application