Manual de instrucciones de Panasonic Transistors 2SD1819G

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
■ Features
■ Package
• High forward current transfer ratio h •
FE Code
• Low collector-emitter saturation voltage V
CE(sat) SMini3-F2
• S-Mini type package, allowing downsizing of the equipment and •
Marking Symbol: Z
automatic insertion through the tape pacing and the magazine •
Pin Name
pacing.
1: Base
2: Emitter
3: Collector

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1819G P  T I  V I  V C a C CE B BE 60 1200 200 T = 25°C a V = 10 V CE I = 160 µA T = 25°C B a 50 1000 160 140 µA 40 800 120 µA 120 100 µA 30 600 80 µA 80 60 µA 20 400 40 µA 40 10 200 20 µA 0 0 0 01 26 4 80 0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160 ( ) ( ) Collector-emitter voltage V V Base-emitter voltage V V Ambient temperature T (°C) CE BE a I  V I  I V  I C BE C B CE(sat) C 100 200 240 I / I = 10 C B V = 10 V CE V = 10

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This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 3 12 +0.05 (0.65) (0.65) 0.13 −0.02 1.30 ±0.10 (5°) 0 to 0.10 (0.89) 1.25 ±0.10 0.90 ±0.10 2.10 ±0.10 (5°) 0.425 ±0.050 (0.49)

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application