Instruction d'utilisation Panasonic MA2SD300G

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD300G
Silicon epitaxial planar type
For super high speed switching
■ Features ■ Package
•
• Small reverse current: I < 2 µA (at V = 30 V) Code
R R
• Optimum for high frequency rectification because of its short SSMini2-F4
•
reverse recovery time t . Pin Name
rr
1: Anode
2: Cathode
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
■ Marking Symbol: 8N
Reverse voltage V 30 V
R
Repeti

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD300G I  V I  V C  V F F R R t R 3 10 10 100 T = 25°C a 75°C 2 10 1 T = 75°C a 10 −1 10 25°C 1 10 25°C −2 T = −25°C 10 a −1 10 −3 10 −25°C −2 10 −3 −4 10 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Reverse voltage V (V) F R R I  T F(AV) a 140 T = 125°C j I F t p 120 T DC 100 80 60 40 20 0 0 40 80 120 160 ( ) Ambient temperature T °C a 2

Résumé du contenu de la page N° 3

This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD300G SSMini2-F4 Unit: mm +0.05 +0.05 0.80 −0.03 0.13 −0.02 2 0 to 0.05 1 0.30 ±0.05 5° SKH00181AED 3 +0.05 0.60 −0.03 5° (0.15) +0.05 0.20 ±0.05 1.20 −0.03 1.60 ±0.05

Résumé du contenu de la page N° 4

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application