Instruction d'utilisation Panasonic MA3X789 (MA789)

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3X789 (MA789)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
+0.10
0.40
–0.05 +0.10
0.16
–0.06
For small current rectification
3
■ Features
• Forward current (Average) I = 500 mA rectification is
F(AV)
1 2
possible
(0.95) (0.95)
• Reverse voltage V = 60 V is guaranteed
R
1.9±0.1
+0.20
2.90
–0.05
10˚
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
Reverse volta

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3X789 I  V I  V C  V F F R R t R 3 4 120 10 10 T = 125°C a T = 125°C a 2 3 10 10 75°C 75°C 80 25°C 2 10 10 25°C 1 10 40 −1 10 1 −2 −1 0 10 10 0 0.2 0.4 0.6 0 20406080 100 120 020 40 60 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R I  t F(surge) W 3 10 T = 25°C a I F(surge) t W 2 10 10 1 −1 10 −1 2 10 1 10 10 ( ) Pulse width t ms W SKH00089CED 2 Forward surge current I (A) Forward current I

Résumé du contenu de la page N° 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application