Instruction d'utilisation Transcend Information Mobile Memory Card TS64MRMMC4

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TS64M~1GRMMC4
TS64M~1GRMMC4
TS64M~1GRMMC4 MMCmobile


Description Features
TS64MRMMC4 ~ TS1GRMMC4 is a 64MB ~ 1GB • Storage Capacity: 64MB ~ 1GB
MMCmobile memory card. It’s a fastest, low-power, • Support Dual Operating Voltage: 2.7~3.6V/1.65~1.95V
highly integration memory card. TS64MRMMC4 ~ • Support clock frequencies: 0~52MHz
TS1GRMMC4 is designed to provide an inexpensive, • Support different Bus width: x1, x4, x8
mechanically robust storage medi

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile MultiMediaCard Architecture 2 Transcend Information Inc.

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile Temperature Characteristics Parameter Min. Max. Unit Operating temperature -25 85 ℃ Electrical Characteristics • Absolute Maximum Ratings Parameter Symbol Rating Unit Power Supply Voltage V -0.6~+4.6 V CC Input Voltage V -0.6~+4.6 V IN Input/Output Voltage V -0.6~+4.6 V I/O • Recommended Operation Conditions Parameter Symbol Min. Typ. Max. Unit Power Supply Voltage (Hig

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile DC Characteristics • High Voltage Power Supply (Ta=-25℃ to 85℃,V =2.7V to3.6V) DDH Parameter Symbol Min. Typ. Max. Unit Condition Output Low Voltage (OD) V 0.3 V I =2mA ODOL OL Output High Voltage (PP) V 0.75* V V I =-100uA OH DDH OH Output Low Voltage (PP) V 0.125* V V I =100uA OL DDH OL Input High Voltage V 0.625* V V +0.3 V IH DDH DDH

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile AC Characteristics • High Speed Card Interface Timing (Ta=-25℃ to 85℃,V =2.7V to3.6V) DDH Parameter Symbol Min. Max. Unit Notes Clock Frequency (Data Transfer Mode) fpp 26 52 MHz Clock Frequency (Identification Mode) f 0 400 KHz OD Clock Low Time t 6.5 ns WL Clock Rise Time t 3 ns TLH Clock Fall Time t 3 ns THL Input Set-up Time t 3

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile • Backwards Compatible Card Interface Timing (Ta=-25℃ to 85℃,V =2.7V to3.6V) DDH Parameter Symbol Min. Max. Unit Notes Clock Frequency (Data Transfer Mode) fpp 0 20 MHz Clock Frequency (Identification Mode) f 0 400 KHz OD Clock Low Time t 10 ns WL Clock Rise Time t 10 ns TLH Clock Fall Time t 10 ns THL Input Set-up Time t 3 ns ISU Input Hold Time t 3

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile • Command Latch Cycle Parameter Symbol Min. Unit Notes 30 CLE Setup Time t ns C <=80pF CLS1 L 15 CLE Hold Time t ns C <=80pF CLH1 L 40 CE Setup Time t ns C <=80pF CS1 L 90 CE Hold Time t ns C <=80pF CH1 L 90 ALE Setup Time t ns C <=80pF ALS1 L 75 ALE Hold Time t ns C <=80pF ALH1 L 45 WE Pulse Width t ns C <=80pF WP1 L 90 Data Setup Time t ns C <=80pF DS1 L 30 Data Hold Time t ns C <

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile Parameter Symbol Min. Unit Remark 90 CLE Setup Time t ns C <=80pF CLS2 L 195 CE Setup Time t ns C <=80pF CS2 L 30 ALE Setup Time t ns C <=80pF ALS2 L 15 ALE Hold Time t ns C <=80pF ALH2 L 150 Write Cycle Time t ns C <=80pF WC2 L 45 WE Pulse Width t ns C <=80pF WP2 L 105 WE High Hold Time t ns C <=80pF WH2 L 90 Data Setup Time t ns C <=80pF DS2 L 30 Data Hold Time t ns C <=80pF DH2

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile Parameter Symbol Min. Unit Remark 285 CLE Hold Time t ns C <=80pF CLH3 L 195 CE Hold Time t ns C <=80pF CH3 L 90 ALE Setup Time t ns C <=80pF ALS3 L 60 Write Cycle Time t ns C <=80pF WC3 L 45 WE Pulse Width t ns C <=80pF WP3 L 15 WE High Hold Time t ns C <=80pF WH3 L 30 Data Setup Time t ns C <=80pF DS3 L 30 Data Hold Time t ns C <=80pF DH3 L 9 Transcend Information Inc.

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile • Serial Access Cycle after Read Parameter Symbol Min. Unit Remark 285 CE Access Time t ns C <=80pF CEA4 L 60 Read Cycle Time t ns C <=80pF RC4 L 45 RE Pulse Width t ns C <=80pF RP4 L 15 RE High Hold Time t ns C <=80pF REH4 L 5(TBD) Data Setup Time t ns C <=80pF DS4 L 5(TBD) Data Hold Time t ns C <=80pF DH4 L 285 Ready to RE Low t ns C <=80pF RR4 L

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TS64M~1GRMMC4 TS64M~1GRMMC4 TS64M~1GRMMC4 MMCmobile Reliability and Durability Temperature Operation: -25°C / 85°C Storage: -40°C (168h) / 85°C (500h) Junction temperature: max. 95°C Moisture and corrosion Operation: 25°C / 95% rel. humidity Stress: 40°C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 ESD protection Contact Pads: +/-4kV, Human body model according to ANSI EOS/ESD-S5.1-1998 Non Contact Pads a