Manual do usuário Panasonic Schottky Barrier Diodes MA3SE020G

Resumo do conteúdo contido na página número 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3SE020G
Silicon epitaxial planar type
For cellular phone
■ Package
■ Features
•
• Code
High-frequency wave detection is possible
• SSMini3-F3
Low forward voltage V
F
•
• Pin Name
Small terminal capacitance C
t
1: Anode 1
2: Cathode 2
3: Cathode 1
■ Absolute Maximum Ratings T = 25°C
a
Anode 2
Parameter Symbol Rating Unit
Reverse voltage V 20 V
■ Marking Symbol: M6B
R
Maximum peak reverse voltage V 20 V

Resumo do conteúdo contido na página número 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3SE020G I  V C  V I  T R R t R F(AV) a 2 10 1.2 50 T = 25°C a T = 125°C T = 125°C j a I F t p 10 40 T DC 75°C 0.8 30 1 25°C −1 10 20 0.4 −2 10 10 −3 0 0 10 010 20 0 5 10 15 20 25 30 0 40 80 120 160 ( ) Reverse voltage V (V) Ambient temperature T (°C) Reverse voltage V V R a R 2 SKH00213AED Reverse current I (µA) R Terminal capacitance C (pF) t (m ) Forward current (Average) I A F(AV)

Resumo do conteúdo contido na página número 3

This product complies with the RoHS Directive (EU 2002/95/EC). MA3SE020G SSMini3-F3 Unit: mm +0.05 1.60 −0.03 +0.05 0.26 −0.02 3 12 +0.05 (0.50) (0.50) 0.13 −0.02 1.00 ±0.05 (5°) SKH00213AED 3 +0.05 0 to 0.10 0.85 −0.03 +0.05 0.70 −0.03 1.60 ±0.05 (5°) 0.375 ±0.05 (0.45)

Resumo do conteúdo contido na página número 4

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application