Resumo do conteúdo contido na página número 11
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1425JV18 follows. BWS K K Comments 0 L L–H – During the Data portion of a write sequence, the single byte (D ) is written into the device. [8:0] ) is written into the device. L – L–H During the Data portion of a write sequence, the single byte (D [8:0] H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into t
Resumo do conteúdo contido na página número 12
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions can be serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-2001. The TAP operates using JEDEC page 15. U
Resumo do conteúdo contido na página número 13
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into When the BYPASS instruction is loaded in the instruction register the instruction register. It also places the instruction register and the TAP is placed in a Shift-DR state, the bypass register is between the TDI and TDO pins and shifts the IDCODE out of the placed between the TDI and TDO pins. The advantage of the device when the TAP controller enters the Shift-D
Resumo do conteúdo contido na página número 14
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 TAP Controller State Diagram [9] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 001-12561 Rev. *D
Resumo do conteúdo contido na página número 15
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 108 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
Resumo do conteúdo contido na página número 16
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 TAP AC Switching Characteristics [13, 14] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
Resumo do conteúdo contido na página número 17
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Identification Register Definitions Value Instruction Field Description CY7C1410JV18 CY7C1425JV18 CY7C1412JV18 CY7C1414JV18 Revision Number 001 001 001 001 Version number. (31:29) Cypress Device ID 11010011010000111 11010011010001111 11010011010010111 11010011010100111 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
Resumo do conteúdo contido na página número 18
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43
Resumo do conteúdo contido na página número 19
~ ~ CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 DLL Constraints Power Up Sequence in QDR-II SRAM ■ DLL uses K clock as its synchronizing input. The input must QDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. During Power Up, when the DOFF is tied HIGH, the DLL gets locked ■ The DLL functions at frequencies down to 120 MHz. after 1024 cycles of stable clock. ■ If the input clo
Resumo do conteúdo contido na página número 20
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Current into Outputs (LOW) ........................................ 20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Exceeding maximum ratings may impair the useful life of the Latch-up Current ................................................... > 200 mA device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Operating Range Ambient Temperature with Pow
Resumo do conteúdo contido na página número 1
CY7C1410JV18, CY7C1425JV18
CY7C1412JV18, CY7C1414JV18
36-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features Configurations
■ Separate independent read and write data ports CY7C1410JV18 – 4M x 8
❐ Supports concurrent transactions CY7C1425JV18 – 4M x 9
CY7C1412JV18 – 2M x 18
■ 267 MHz clock for high bandwidth
CY7C1414JV18 – 1M x 36
■ 2-word burst on all accesses
Functional Description
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 534 MHz) at 267 MHz
The
Resumo do conteúdo contido na página número 2
2M x 9 Array 2M x 8 Array 2M x 9 Array 2M x 8 Array CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Logic Block Diagram (CY7C1410JV18) 8 D [7:0] Write Write 21 Address A Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK K Logic C Gen. DOFF Read Data Reg. C CQ 16 V 8 REF 8 CQ Reg. Reg. Control WPS Logic 8 8 Q NWS Reg. [7:0] [1:0] 8 Logic Block Diagram (CY7C1425JV18) 9 D [8:0] Write Write 21 Address A Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK
Resumo do conteúdo contido na página número 3
1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Logic Block Diagram (CY7C1412JV18) 18 D [17:0] Write Write 20 Address A Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 36 V 18 REF 18 CQ Reg. Reg. Control WPS Logic 18 18 BWS Q Reg. [1:0] [17:0] 18 Logic Block Diagram (CY7C1414JV18) 36 D [35:0] Write Write 19 Address A Reg Reg (18:0) Register 19 Address A (18:0) Register
Resumo do conteúdo contido na página número 4
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Pin Configuration [1] The pin configuration for CY7C1410JV18, CY7C1412JV18, and CY7C1414JV18 follow. 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1410JV18 (4M x 8) 123456789 10 11 A CQ NC/72M A WPS NWS K NC/144M RPS AA CQ 1 B NC NC NC A NC/288M K NWS ANC NC Q3 0 C NC NC NC V AAA V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC D5 Q
Resumo do conteúdo contido na página número 5
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Pin Configuration [1] The pin configuration for CY7C1410JV18, CY7C1412JV18, and CY7C1414JV18 follow. (continued) 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1412JV18 (2M x 18) 123456789 10 11 A CQ NC/144M A WPS BWS K NC/288M RPS A NC/72M CQ 1 B NC Q9 D9 A NC K BWS ANC NC Q8 0 C NC NC D10 V AAA V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12 V V V V V NC NC Q5 DDQ D
Resumo do conteúdo contido na página número 6
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Pin Definitions Pin Name IO Pin Description D Input- Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. [x:0] CY7C1410JV18 - D Synchronous [7:0] CY7C1425JV18 - D [8:0] CY7C1412JV18 - D [17:0] CY7C1414JV18 - D [35:0] WPS Input- Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the writ
Resumo do conteúdo contido na página número 7
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Pin Definitions (continued) Pin Name IO Pin Description CQ Echo Clock CQ is Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 22. CQ Echo Clock CQ is Referenced with Respect to C. This is a free - running clock and
Resumo do conteúdo contido na página número 8
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Write Operations Functional Overview Write operations are initiated by asserting WPS active at the The CY7C1410JV18, CY7C1425JV18, CY7C1412JV18, and rising edge of the positive input clock (K). On the same K clock CY7C1414JV18 are synchronous pipelined Burst SRAMs with a rise, the data presented to D is latched and stored into the [17:0] read port and a write port. The read port is dedicated to read are both lower 18-bit write data register,
Resumo do conteúdo contido na página número 9
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 clock mode, CQ is generated with respect to K and CQ is Programmable Impedance generated with respect to K. The timing for the echo clocks is An external resistor, RQ, must be connected between the ZQ pin shown in the Switching Characteristics on page 22. on the SRAM and V to allow the SRAM to adjust its output SS driver impedance. The value of RQ must be 5x the value of the DLL intended line impedance driven by the SRAM. The allowable These
Resumo do conteúdo contido na página número 10
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Truth Table [2, 3, 4, 5, 6, 7] The truth table for CY7C1410JV18, CY7C1425JV18, CY7C1412JV18, and CY7C1414JV18 follows. Operation K RPS WPS DQ DQ L-H X L D(A + 0) at K(t) ↑ D(A + 1) at K(t) ↑ Write Cycle: Load address on the rising edge of K; input write data on K and K rising edges. Read Cycle: L-H L X Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising
