Panasonic Schottky Barrier Diodes MA3Z792EGの取扱説明書

ページ1に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3Z792DG, MA3Z792EG
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
■ Package
•
Two MA3Z7920G is contained in one package •
Code
•
Forward current (Average) I = 100 mA rectification is possible
SMini3-F2
F(AV)
•
Optimum for high frequency rectification because of its short •
Pin Name
reverse recovery time t
MA3Z792DG MA3Z792EG
rr
•
Low forward volt

ページ2に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC). MA3Z792DG, MA3Z792EG I  V I  V V  T F F R R F a 3 4 10 10 1.0 75°C 25°C 2 3 10 10 0.8 T = 125°C a T = 125°C −20°C a 2 10 10 0.6 75°C I = 100 mA F 1 10 0.4 25°C −1 10 1 0.2 10 mA 3 mA −2 −1 10 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 −40 0 40 80 120 160 200 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V I  T R a t R F(AV) a 4 140 10 24 °C T = 125 j f = 1 MHz T = 25°C a 120 2

ページ3に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC). MA3Z792DG, MA3Z792EG SMini3-F2 Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 3 12 +0.05 (0.65) (0.65) 0.13 −0.02 1.30 ±0.10 (5°) SKH00215BED 3 (0.89) 0 to 0.10 1.25 ±0.10 0.90 ±0.10 2.10 ±0.10 (5°) 0.425 ±0.050 (0.49)

ページ4に含まれる内容の要旨

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application