ページ1に含まれる内容の要旨
INTEGRATED CIRCUITS
DATA SHEET
TDA8586
Power amplifier with load detection
and auto BTL/SE selection
Preliminary specification 2001 Jul 23
Supersedes data of 1999 Apr 08
File under Integrated Circuits, IC01
ページ2に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection FEATURES GENERAL DESCRIPTION General The device incorporates the following functions: • 4 × 6 W SE amplifies without SE capacitor, because of • Operating voltage from 8 to 18 V the availability of 2 half supply voltage power buffers • Low distortion • 2 × 20 W BTL amplifiers • Few external components, fixed gain • Automatic switching between 2 and 4 speaker • Automatic mode select
ページ3に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V operating supply voltage 8.0 - 18 V P I total quiescent current V = 14.4 V, SE mode - 140 170 mA q(tot) P I standby supply current V = 14.4 V - 1 100 μA stb P G voltage gain SE mode 25 26 27 dB v BTL mode 31 32 33 dB Bridge-tied load application P output power V = 14.4 V; R =4 Ω o P L THD = 0.5% 14 15 - W THD =
ページ4に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection BLOCK DIAGRAM V handbook, full pagewidth V P1 P2 2 16 5 IN1 - 60 V/I - kΩ 1 + OUT1 OA + + 60 TDA8586Q V/I - kΩ 3 V - Pn HVP1 OA + + 6 4 OUT2 IN2 OA + 60 - V/I kΩ - 7 IN3 - 60 V/I - kΩ 17 + OUT3 OA + 11 ACREF + V Pn 60 V/I - kΩ 15 V - Pn HVP2 OA 30 kΩ + BUFFER + 8 14 IN4 OUT4 + OA 60 - V/I kΩ - 13 12 MSO DIAG INTERFACE DIAGNOSTIC 10 9 MGR023 PGND2 PGND1 Fig.1 Block diagram SOT243-
ページ5に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection handbook, full pagewidth V V P1 P2 18 13 2 IN1 - 60 V/I - kΩ 17 + OUT1 OA + + 60 TDA8586TH V/I - kΩ 1 19 V - Pn n.c. OA HVP1 + + 3 20 IN2 OA OUT2 + 60 - V/I kΩ - 4 IN3 - 60 V/I - kΩ 14 + OUT3 OA + 6 ACREF + V Pn 60 V/I - kΩ 12 V - Pn HVP2 OA 30 kΩ + BUFFER + 5 11 IN4 OA OUT4 + 60 - V/I kΩ - 8 7 DIAG MSO INTERFACE DIAGNOSTIC 10 9 15 16 MGR024 DDDSEL OVERRULE PGND2 PGND1 Fig.2 Bloc
ページ6に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection PINNING PIN SYMBOL DESCRIPTION TDA8586Q TDA8586TH n.c. - 1 not connected IN1 5 2 non-inverting input 1 IN2 6 3 inverting input 2 IN3 7 4 non inverting input 3 IN4 8 5 inverting input 4 ACREF 11 6 common signal input DIAG 12 7 diagnostic output/mode fix MSO 13 8 mode select mute, standby or on OVERRULE - 9 mode selection overrule DDDSEL - 10 2 or 10% dynamic distortion detection OUT
ページ7に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection handbook, halfpage OUT1 1 V 2 P1 3 HVP1 handbook, halfpage OUT2 4 OUT2 20 1 n.c. HVP1 IN1 5 19 2 IN1 V 18 3 IN2 6 IN2 P1 OUT1 17 4 IN3 7 IN3 PGND1 16 5 IN4 IN4 8 TDA8586TH PGND2 15 6 ACREF PGND1 9 TDA8586Q OUT3 14 7 DIAG PGND2 10 V 13 8 MSO ACREF 11 P2 12 HVP2 12 9 OVERRULE DIAG OUT4 13 11 10 DDDSEL MSO MGR026 14 OUT4 15 HVP2 V 16 P2 OUT3 17 MGR025 Fig.3 Pin configuration (SOT243
ページ8に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection FUNCTIONAL DESCRIPTION The presence of the load is measured after the transition between standby and mute. The IC will determine if there The TDA8586 is a multi-purpose power amplifier with four is an acceptable load on both outputs (OUT2 and OUT4). amplifiers and 2 buffer stages, which can be connected in If both outputs are unloaded, the IC will switch to a the following configu
ページ9に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection handbook, full pagewidth mute mute on on on state standby condition load detect no load detect no clipping/shorts clipping short-circuit V P V P 0 minimum 1 s 9 V SE detection MSO 3 V BTL detection 0 BTL detected 5 V diagnostic information SE detected 0 10 V The mode is overruled only from diagnostic BTL to SE when the diagnostic pin overrule is excited with a pulse of 10 V. 0 5
ページ10に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V supply voltage operating 8 18 V P load dump protected; - 45 V see Fig.6 V voltage on diagnostic pin - 18 V DIAG I non-repetitive peak output current - 6A OSM I repetitive peak output current - 4A ORM V reverse polarity voltage note 1 - 6V rp V AC and DC s
ページ11に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection CHARACTERISTICS V = 14.4 V; T =25 °C; f = 1 kHz; R = ∞; measured in test circuit of Fig.8; unless otherwise specified. P amb i L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies V operating supply voltage 8.0 14.4 18 V P I total quiescent current SE mode - 140 170 mA q(tot) I standby current - 1 100 μA stb V DC output voltage V = 14.4 V - 7.0 - V O P V low supply voltage mu
ページ12に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G voltage gain V =15mV 313233dB v i(rms) ΔG channel unbalance V =15mV - 0.7 0 +0.7 dB v i(rms) α channel separation P = 2 W; f = 1 kHz; R =4 Ω 45 55 - dB cs o i L V DC output offset voltage V = 14.4 V; on condition - 0 100 mV OO P V = 14.4 V; R =4 Ω; - 10 20 mV P L mute condition V noise output voltage on R =1kΩ; V = 14.4 V; note 3 -
ページ13に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection APPLICATION INFORMATION V handbook, full pagewidth P 1000 μF 100 nF (16/40 V) V V P1 P2 2 16 220 nF IN1 5 - 60 V front V/I - INL kΩ OUT1 1 + OA + + 4 or 8 Ω + - 60 TDA8586Q V/I - kΩ HVP1 3 V - Pn OA + + 220 nF IN2 6 4 OUT2 OA + 60 - V/I kΩ - 220 nF IN3 7 - 60 V front V/I - INR kΩ OUT3 17 + OA + ACREF 11 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 15 V - Pn OA 30 kΩ + BUFFER
ページ14に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection V handbook, full pagewidth P 1000 μF 100 nF (16/40 V) V V P1 P2 2 16 220 nF IN1 5 - 60 V front V/I - INL kΩ OUT1 1 + OA + + 4 or 8 Ω + - 60 TDA8586Q V/I - kΩ HVP1 3 V - Pn OA + + 4 or 8 Ω - + 220 nF OUT2 IN2 6 4 OA + 60 - V/I V rear INL kΩ - 220 nF IN3 7 - 60 V front V/I - INR kΩ OUT3 17 + OA + ACREF 11 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 15 V - Pn OA 30 kΩ + + 4 or
ページ15に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection V handbook, full pagewidth P 1000 μF 100 (16/40 V) nF V V P1 P2 18 13 220 nF IN1 2 - 60 V/I V front - INL kΩ OUT1 17 + OA + + 4 or 8 Ω + - 60 TDA8586TH V/I - kΩ HVP1 19 n.c. 1 V - Pn OA + + 220 nF IN2 3 20 OUT2 + OA 60 - V/I kΩ - 220 nF IN3 4 - 60 V front V/I - INR kΩ OUT3 14 + OA + ACREF 6 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 12 V - Pn OA 30 kΩ + BUFFER + 220 nF IN4
ページ16に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection V handbook, full pagewidth P 1000 μF 100 nF (16/40 V) V V P1 P2 18 13 220 nF IN1 2 - 60 V front V/I - INL kΩ OUT1 17 + OA + + 4 or 8 Ω + - 60 TDA8586TH V/I - kΩ HVP1 n.c. 1 19 V - Pn OA + + 4 or 8 Ω - + 220 nF OUT2 IN2 3 20 OA + 60 - V/I V rear INL kΩ - 220 nF IN3 4 - 60 V front V/I - INR kΩ OUT3 14 + OA + ACREF 6 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 12 V - Pn OA 30 k
ページ17に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection INTERNAL PIN CONFIGURATION PIN NAME EQUIVALENT CIRCUIT TDA8586TH 2, 3, 4, 5 and 6 inputs V handbook, halfpage P IN MGE014 11, 12, 14, 17, outputs handbook, halfpage V P 19 and 20 OUT 0.5 V MGE015 P 8 mode select V handbook, halfpage P MGE016 2001 Jul 23 17
ページ18に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection PACKAGE OUTLINES DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave D h x D E h view B: mounting base side d A 2 B j E A L 3 L Q c v M 117 e m e w M Z 1 2 b p e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) (1) (1) UNIT A A b cDdeD E e e E j LL m Q v w x Z 2 p h 1 2 h 3 17.0 4.6 0.75 0.48 24.0 20.0 12.2 3.4 12.4 2.4 2.1
ページ19に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-2 E A D x X c E y 2 H v M A E D 1 D 2 1 10 pin 1 index Q A A 2 (A ) E 3 1 A 4 θ L p detail X 20 11 w M Z b e p 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A (1) (2) (2) A A A b c D D D E E E e H L Q v w x yZ θ UNIT 2 3 4 p 1 2 1 2 E p max. +0.12 0.53 0.32 16.0 13.0 1.1 11.1 6.2 2
ページ20に含まれる内容の要旨
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection SOLDERING Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the Introduction packages should preferable be kept below 220 °C for This text gives a very brief insight to a complex technology. thick/large packages, and below 235 °C for small/thin A more in-depth account of soldering ICs can be found in packages. our “Data Handbook IC26; Integr
