Panasonic 2SD1821G user manual

Summary of the content on the page No. 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1821G
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features ■ Package
• High collector-emitter voltage (Base open) V • Code
CEO
• Low noise voltage NV SMini3-F2
• S-Mini type package, allowing downsizing of the equipment and • Marking Symbol: L
automatic insertion through the tape packing and the magazine • Pin Name
packing. 1: Base
2: Emitter
3: Collector
■

Summary of the content on the page No. 2

This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1821G P  T I  V I  V C a C CE C BE 120 240 120 V = 10 V T = 25°C CE a 25°C 100 200 100 I = 2.0 mA B 1.8 mA 1.6 mA T = 75°C −25°C a 1.4 mA 80 160 80 1.2 mA 1.0 mA 0.8 mA 60 120 60 0.6 mA 0.4 mA 40 80 40 0.2 mA 20 40 20 0 0 0 0 40 80 120 16001 26 4 8 102 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage V (V) Ambient temperature T (°C) Collector-emitter voltage V (V) BE a CE V  I h  I f  I CE(sat) C FE C T E 100 600 200 I / I =

Summary of the content on the page No. 3

This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 3 12 +0.05 (0.65) (0.65) 0.13 −0.02 1.30 ±0.10 (5°) 0 to 0.10 (0.89) 1.25 ±0.10 0.90 ±0.10 2.10 ±0.10 (5°) 0.425 ±0.050 (0.49)

Summary of the content on the page No. 4

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application