Panasonic MA3S781EG user manual

Summary of the content on the page No. 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3S781DG, MA3S781EG
Silicon epitaxial planar type
For high speed switching
For wave detection
■ Package
•
Code
■ Features
SSMini3-F3
•
Two MA3S7810G is contained in one package
•
Pin Name
•
High-density mounting is possible
MA3S781DG MA3S781EG
•
Low forward voltage V
F
1: Cathode 1 1: Anode 1
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit

Summary of the content on the page No. 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3S781DG, MA3S781EG I  V I  V V  T F F R R F a 3 3 10 10 1.6 75°C 25°C 2 2 10 10 T = 125°C a 1.2 T = 125°C −20°C a 10 10 75°C 0.8 I = 30 mA F 1 1 25°C 0.4 −1 −1 3 mA 10 10 1 mA −2 −2 10 10 0 −40 0 40 80 120 160 200 0 0.4 0.8 1.2 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V I  t R a t R F(surge) W 3 3 10 3.0 10 T = 25°C a I F(surge) 2 t 10 W V = 30 V R 2 10 10 V

Summary of the content on the page No. 3

This product complies with the RoHS Directive (EU 2002/95/EC). MA3S781DG, MA3S781EG SSMini3-F3 Unit: mm +0.05 1.60 −0.03 +0.05 0.26 −0.02 3 12 +0.05 (0.50) (0.50) 0.13 −0.02 1.00 ±0.05 (5°) SKH00203AED 3 +0.05 0 to 0.10 0.85 −0.03 +0.05 0.70 −0.03 1.60 ±0.05 (5°) 0.375 ±0.05 (0.45)

Summary of the content on the page No. 4

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application