Instrukcja obsługi Panasonic Transistors 2SB1218A

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1218A
Silicon PNP epitaxial planar type
For general amplification Unit: mm
Complementary to 2SD1819A +0.10
+0.1
0.3 0.15
–0.05
–0.0
3
■ Features
• High forward current transfer ratio h
FE
• S-Mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.3±0.1
2.0±0.2
■ Absolute Maximum Ratings T = 25°C
a
10°
Parameter Symbol Ratin

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1218A P  T I  V I  I C a C CE C B 200 −120 −60 T = 25°C a V = −5 V CE T = 25°C a −100 −50 160 −80 −40 120 I = −300 µA B −60 −30 −250 µA 80 −200 µA −40 −20 −150 µA −100 µA 40 −20 −10 −50 µA 0 0 0 0 −150 −300 −450 0 40 80 120 160 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage V (V) Base current I (µA) Ambient temperature T (°C) CE B a I  V I  V V  I B BE C BE CE(sat) C −240 −400 −10 I / I = 10 C B V = −5 V V = −5 V CE C

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1218A NF  I NF  I h Parameter  I E E E 6 20 V = −5 V CB V = −5 V CE V = −5 V CB R = 50 kΩ g f = 270 Hz f = 1 kHz T = 25°C a T = 25°C a R = 2 kΩ g 5 h fe T = 25°C a 16 100 4 12 h (µS) oe f = 100 Hz 3 1 kHz 8 10 2 10 kHz h (kΩ ) ie 4 1 −4 h (× 10 ) re 0 0 1 0.01 0.1 1 10 0.1 1 10 0.1 1 10 Emitter current I (mA) Emitter current I (mA) Emitter current I (mA) E E E h Parameter  V CE h fe 100 h (µS) oe 10 −4 h (× 10 ) re h (kΩ

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application