Руководство по эксплуатации Panasonic MA2J7280G

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J7280G
Silicon epitaxial planar type
For super high speed switching
For wave detection
■ Package
■ Features
•
• Code
Low forward voltage V and good wave detection efficiency η
F
• SMini2-F3
Small reverse current I
R
•
• Pin Name
Small temperature coefficient of forward characteristic
1: Anode
2: Cathode
■ Absolute Maximum Ratings T = 25°C
a
■ Marking Symbol: 2A
Parameter Symbol Rating Unit
Reverse vo

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2J7280G I  V I  V V  T F F R R F a 3 3 10 10 1.0 75°C 25°C 2 2 10 10 0.8 T = 125°C a T = 125°C −20°C a I = 30 mA F 10 10 0.6 75°C 10 mA 1 1 0.4 25°C 1 mA −1 −1 0.2 10 10 −2 −2 10 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 −40 0 40 80 120 160 200 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V I  T R a t R F(AV) a 3 3.0 50 10 T = 125°C f = 1 MHz j T = 25°C a I F 2.5 t p 2

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2J7280G SMini2-F3 Unit: mm 1.25 ±0.10 +0.05 0.50 ±0.05 0.13 −0.02 2 0 to 0.05 1 0.35 ±0.05 5° SKH00171AED 3 0.7 ±0.1 5° (0.15) 0.4 ±0.1 1.7 ±0.1 2.5 ±0.2

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application