Руководство по эксплуатации Panasonic Transistors 2SB1722G

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■ Features ■ Package
• High collector-emitter voltage (Base open) V • Code
CEO
• SS-Mini type package, allowing downsizing of the equipment and SSMini3-F3
automatic insertion through the tape packing • Marking Symbol: 4R
• Pin Name
1. Base
■ Absolute Maximum Ratings T = 25°C
a
2. Emitter
Parameter Symbol Rating Unit
3. Colle

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1722G P  T I  V I  V C a C CE C BE 150 −35 −50 I = −5.0 mA B V = −10 V CE T = 25°C a −45 −30 125 −4.5 mA −40 −4.0 mA −25 −35 100 −3.5 mA T = 85°C a −25°C −30 −3.0 mA −20 75 −25 −2.5 mA 25°C −15 −20 −2.0 mA 50 −15 −1.5 mA −10 −10 25 −1.0 mA −5 −5 − 0.5 mA 0 0 0 0 25 50 75 100 125 150 0 −2 −4 −6 −8 −10 −12 0 − 0.2 − 0.4 − 0.6 − 0.8 −1 Collector-emitter voltage V (V) Ambient temperature T (°C) Base-emitter voltage V (V) CE

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This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 Unit: mm +0.05 1.60 −0.03 +0.05 0.26 −0.02 3 12 +0.05 0.13 −0.02 (0.50) (0.50) 1.00 ±0.05 (5°) +0.05 0 to 0.10 0.85 −0.03 +0.05 0.70 −0.03 1.60 ±0.05 (5°) 0.375 ±0.05 (0.45)

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application