Instrukcja obsługi Panasonic Transistors 2SD1823

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1823
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
+0.10
+0.1
0.15
0.3
–0.0 –0.05
■ Features
3
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
• High emitter-base voltage (Collector open) V
EBO
• Low noise voltage NV
1 2
• S-Mini type package, allowing downsizing of the equipment
(0.65) (0.65)
and automatic insertion through the tape packing a

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1823 P  T I  V I  V C a C CE C BE 200 120 160 V = 10 V CE T = 25°C a 25°C 100 160 T = 75°C a −25°C 120 I = 100 µA B 80 90 µA 120 80 µA 70 µA 80 60 60 µA 50 µA 80 40 µA 40 30 µA 40 40 20 µA 20 10 µA 0 0 0 0 40 80 120 16001 26 4 8 102 0 0.4 0.8 1.2 1.6 2.0 ( ) ( ) Ambient temperature T °C Collector-emitter voltage V (V) Base-emitter voltage V V a CE BE V  I h  I f  I CE(sat) C FE C T E 1 800 100 250 I / I = 10 V = 10 V C

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application